Polymethyl methacrylate/hydrogen silsesquioxane bilayer resist electron beam lithography process for etching 25 nm wide magnetic wires
نویسندگان
چکیده
منابع مشابه
Polymethyl methacrylate/hydrogen silsesquioxane bilayer resist electron beam lithography process for etching 25 nm wide magnetic wires
A method of patterning magnetic metallic thin films is presented using a bilayer polymethyl methacrylate and hydrogen silsesquioxane electron beam lithography resist mask combined with ion beam etching. The bilayer resist process allows for the combination of a high-resolution resist mask with easy postprocess removal of the mask without damage to the magnetic quality of the film. Co60Fe20B20 a...
متن کاملSub-5 keV Electron-Beam Lithography in Hydrogen Silsesquioxane Resist
We fabricated 9 to 30 nm half-pitch nested Ls and 13 to 15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested L’s and the 13-nm-half-pitch dot array contained some resist residues. We obtained good agreement between...
متن کاملUnderstanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wherein screening of the resist surface charge is crucial in achieving a high initial development rate, which might be a more accurate assessment of developer performance than dev...
متن کاملElectron beam lithography patterning of sub-10 nm line using hydrogen silsesquioxane for nanoscale device applications
We investigated novel patterning techniques to produce ultrafine patterns for nanoscale devices. Hydrogen silsesquioxane HSQ was employed as a high-resolution negative tone inorganic electron beam resist. The nanoscale patterns with sub-10 nm linewidth were successfully formed. A trimming process of HSQ by the reactive ion etcher RIE played an important role for the formation of 5 nm nanowire p...
متن کاملMetrology for electron-beam lithography and resist contrast at the sub-10 nm scale
Exploring the resolution limit of electron-beam lithography is of great interest both scientifically and technologically. However, when electron-beam lithography approaches its resolution limit, imaging and metrology of the fabricated structures by using standard scanning electron microscopy become difficult. In this work, the authors adopted transmission-electron and atomic-force microscopies ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
سال: 2014
ISSN: 2166-2746,2166-2754
DOI: 10.1116/1.4867753